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在常温下测量了ＩＴＯ／８－羟基喹啉铝／Ｍｇ／Ａｇ结构的有机结型器件的电容－电压和伏安特性．它与常见的半导体结型器件特性有很大不同．在小偏压下，界面附近的空间电荷和表面层积累的载流子共同决定对器件的界面特性．在高偏压下，隧穿注入的载流子在膜层内的漂移对器件的电学特性产生主要影响．
The capacitance-voltage and volt-ampere characteristics of ITO / 8-hydroxyquinoline aluminum / Mg / Ag organic junction devices were measured at room temperature. It is very different from the common semiconductor junction device characteristics. Under small bias, the space charge near the interface and the carriers accumulated on the surface layer jointly determine the interface characteristics of the device. Under high bias, the drift of tunneling injected carriers in the film layer has a major influence on the electrical characteristics of the device.