提拉法(Czochralski)是工业化生长硅单晶最广泛使用的方法,晶体生长炉内高温辐射及对流对生长晶体质量十分关键。同时考虑生长炉内热辐射、热传导及熔体自然对流和表面张力流,在晶液界面用多孔介质、用等效比热法模型,数值模拟了小尺寸硅单晶的生长,得到相变界面形状、流场和温度的分布。结果表明:所建模型能较真实地反映晶体的实际生长环境,为晶体生长炉结构设计和生长工艺优化提供了方法上的参考。 Czochralski is the most widely used method for industrially growing silicon single crystals. High temperature radiation and convection in a crystal growth furnace are critical to the quality of the growing crystal. At the same time, considering the heat radiation, heat conduction and natural melt convection and surface tension flow in the growth furnace, the growth of the small-size silicon single crystal was numerically simulated by using the porous medium with the equivalent specific heat model. The phase transition interface shape , Flow field and temperature distribution. The results show that the model can truly reflect the actual growth environment of crystal and provides a methodological reference for the structural design and growth optimization of the crystal growth furnace.