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本文主要介绍LEC SI GaAs离子注硅的退火方法及其在微波功率MES FET中应用研究结果。采用我们试验成功的一种独特的半密闭退火系统,研究了不同退火方式诸如CVDSiO_2包封,PECVDSiN_x包封以及GaAs贴面的无包封退火效果。采用在LEC SI GaAs衬底上选择注硅并用GaAs贴面作无包封退火,以及用CVD SiO_2包封退火的方法制备GaAs MES FET有源层,已达到15GHz下输出功率140mW,相应增益4.5dB的参数指标,为目前国内同类器件最高水平。该器件已通过产品鉴定。
This article describes the LEC SI GaAs ion implantation of silicon annealing method and its application in microwave power MES FET results. A unique semi-airtight anneal system, which we successfully tested, was used to investigate the effects of different annealing methods such as CVDSiO 2 encapsulation, PECVDSiN_x encapsulation and GaAs surfacing without encapsulation annealing. The GaAs MES FET active layer was prepared by selective injection of silicon on LEC SI GaAs substrate and GaAs overlay without annealing and CVD SiO 2 encapsulation annealing. The output power reached 140mW at 15GHz and the corresponding gain was 4.5dB The parameters of the indicators for the current domestic highest level of similar devices. This device has passed product qualification.