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提出了一种精确测试电吸收调制激光器(EML)集成芯片高频特性的方法。待测芯片制作在带有微带线的热沉上,同时采用光探测器作为光电转换器,二者构成待测双口网络。被测双口网络的一端是共面线,使用微波探针作为测试夹具加载信号,另一端是同轴线,两个测试端口不同,不能采用简单的同轴校准方法校准待测系统。测试过程中采用扩展的开路-短路-负载(OSL)误差校准技术对集成器件的测试夹具微波探针进行校准,扣除了测试中使用的微波探针对集成光源高频特性的影响,同时采用光外差的方法扣除了高速光探测器的频率响应对结果的影响,得到集成光源散射参数的精确测试结果。
A method for accurately testing the high frequency characteristics of an integrated chip of an electro-absorption modulation laser (EML) is proposed. The chip under test is fabricated on a heat sink with a microstrip line and a photodetector is used as a photoelectric converter, both of which form the dual port network to be tested. One end of the dual-ported network under test is a coplanar line. The microwave probe is used as a loading signal for the test fixture, and the other end is a coaxial line. The two test ports are different and a simple coaxial calibration method can not be used to calibrate the system under test. During the test, the integrated open-short-load (OSL) error calibration technique was used to calibrate the microwave probe of the integrated device’s test fixture, which deducted the influence of the microwave probe used in the test on the high-frequency characteristics of the integrated light source, The method of heterodyne subtracts the effect of the high-speed photodetector’s frequency response on the result and obtains the accurate test result of the integrated light source scattering parameter.