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本文介绍了一种用于Ⅲ一Ⅴ族半导体化合物生长的新的液相外延法——蒸气压控制温差液相外延法。该方法的特点在于在生长系统中引入适当的Ⅴ族元素蒸气压以抑制Ⅴ族元素空位的产生;外延生长由母液中的温度梯度来维持;生长过程中衬底温度保持恒定,且生长温度大大低于普通液相外延法。将该方法用于GaAs液相外延获得了高质量的外廷层,其室温非有意掺杂载流子浓度小于2×10~(15)/cm~3,电子霍耳迁移率大于6000cm~2/v·sec,位错腐蚀坑密度可低至470/cm~2。
This paper presents a new liquid-phase epitaxy method for the growth of III-V semiconductor compounds - vapor pressure controlled liquid-phase epitaxy. The method is characterized by introducing appropriate vapor pressure of the group V element in the growth system to suppress the generation of the vacancies of the group V element; epitaxial growth is maintained by the temperature gradient in the mother liquor; the substrate temperature is kept constant during growth and the growth temperature is greatly increased Lower than ordinary liquid phase epitaxy. The method is applied to the GaAs liquid-phase epitaxy to obtain a high-quality outer layer, the room temperature unintended doping carrier concentration is less than 2 × 10 ~ (15) / cm ~ 3, the electron Hall mobility greater than 6000cm ~ 2 / v · sec, the density of dislocation corrosion pits can be as low as 470 / cm ~ 2.