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一、概述 在TTL(晶体管—晶体管逻辑)集成电路的制造中,在一块单晶片上制成了集成电路中的晶体管、二极管和电阻等元件,在解决了它们之间的隔离问题之后,还需要按一定的要求把它们连接起来,以构成具有某一功能的电路。这种管芯内部的连接,即内引线的制作,通常是采用真空蒸发工艺,把金属铝蒸发到硅片表面,再经光刻工艺制备所需的内引线。在数字逻辑电路中,为了提高运算速度,电路设计上要进行“掺金工艺”,这种掺金方法,要求能控制其数量,并保证成批生产的均匀性和重复性,实用的掺金工艺也是先用真空蒸发的办法,在硅片背面沉积一定量的金膜,再经高温扩散到硅片内部。
I. INTRODUCTION In the manufacture of TTL (Transistor-Transistor Logic) integrated circuits, transistors, diodes and resistors in an integrated circuit are made on a single chip. After the isolation problem between them is solved, According to certain requirements, connect them together to form a circuit with a certain function. This die internal connections, that is, the inner lead of the production, usually by vacuum evaporation process, the metal aluminum evaporation to the silicon surface, and then lithography process to prepare the required inner lead. In the digital logic circuit, in order to improve the speed of operation, the circuit design should be carried out “gold-doped process,” this method of doping gold, requiring control of its number, and to ensure the uniformity and repeatability of batch production, practical doping Process is the first vacuum evaporation method, deposition of a certain amount of gold on the back of the silicon film, and then spread to the high temperature silicon inside.