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目前的大规模集成电路,是在二维平面内制作的,靠采用发展着的微细加工技术和器件工艺技术,而向高密度、高集成化和高速化发展,正迈向兆位级领域。予测将来定会碰到电路条宽微细化及其他各种技术上的限制。因此,对于二维大规模集成电路来说,在不远的将来,应该要对预想的困难采取措施,而且争取作出用二维技术无法构成的,而只有创新出三维结构的新的多功能器件,于是就设计了即使在纵向也可成立体方式集成电路元件的三维器件。
Currently, large-scale integrated circuits are fabricated in a two-dimensional plane and are being developed to high-density, high-integration and high-speed applications by adopting the development of micro-fabrication technology and device technology, and are moving toward megabit levels. Predicted in the future will meet the circuit strip width and other various technical limitations. Therefore, for two-dimensional LSIs, in the near future, measures should be taken for the anticipated difficulties and new multi-functional devices that can not be formed by two-dimensional technologies but only innovate three-dimensional structures , Thus designing a 3D device that can be a solid-state integrated circuit element even in the longitudinal direction.