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In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.
In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source / drain (S / D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. of S / D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S / D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal semiconductor junction.