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据《信学技报》(日)2010年109-361期报道,日本NTT近日开发了插入AlGaN层的InAlN/AlGaN/GaN增强型场效应晶体管。In组分由0.245增加到0.325,二维电子气浓度由6.5×10~(12)降低到1.3×10~(12)。插入AlGaN层,In组分为0.245时,获得1570 cm~2/V·s电子迁移率。通过形成选择再生长AlGaN接触层,层电阻由17000下降到584Ω/sq。这次制作的FET器件,最大跨导为60 mS/mm,最大漏电流为0.11 A/mm。In组分增加后,阈值电压由-3.2 V降为-0.2 V。
According to “Letters Science and Technology” (Japan) 2010 109-361 period report, Japan NTT recently developed into the AlGaN layer of InAlN / AlGaN / GaN enhanced field effect transistor. The In composition increases from 0.245 to 0.325, and the two-dimensional electron gas concentration decreases from 6.5 × 10-12 to 1.3 × 10-12. Inserting the AlGaN layer, the In composition is 0.245, the electron mobility is 1570 cm 2 / V · s. The layer resistance decreased from 17000 to 584 Ω / sq by forming a selectively regrown AlGaN contact layer. The FET devices fabricated this time have a maximum transconductance of 60 mS / mm and a maximum leakage current of 0.11 A / mm. After the In composition increases, the threshold voltage decreases from -3.2 V to -0.2 V.