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叙述了基于Ｐ型硅半导体中的热载流子效应研制成功的一种单脉冲高功率微波探测器。这种高功率微波探测器具有承受微波功率高（比普通检波器高近六个量级）、时间响应快（响应时间小于２．０ｎｓ）等特点。探测器由Ｐ型硅传感单元和标准波导组成，其工作频率范围为波导的工作频率范围，根据不同需求可以在３．０ＧＨｚ至３０ＧＨｚ的频率范围内制作成多种不同型号的探测器。也给出了工作在Ｘ波段的这种探测器的标定方法和标定结果，标定结果表明探测器的输出信号幅度正比于注入微波功率，输出电压值可达１０Ｖ。该探测器很适合于高功率微波峰值功率测量，尤其在电磁干扰环境中具有优势，为解决目前高功率微波功率测量不准的技术难题提供了一种有效的技术手段。
A single pulse high power microwave detector based on hot carrier effect in P type silicon semiconductor is described. This high-power microwave detector with high microwave power (higher than the average geophone nearly six orders of magnitude), fast response time (response time of less than 2.0ns) and so on. The detector consists of a P-type silicon sensing unit and a standard waveguide. The working frequency range of the detector is the operating frequency range of the waveguide. According to different requirements, the detector can be manufactured into a plurality of different types of detectors within a frequency range of 3.0 GHz to 30 GHz. The calibration method and calibration results of this detector operating in the X-band are also given. The calibration results show that the amplitude of the output signal of the detector is proportional to the injected microwave power and the output voltage can reach 10V. The detector is suitable for high power microwave peak power measurement, especially in the electromagnetic interference environment has an advantage, in order to solve the current high power microwave power measurement inaccurate technical problems provide an effective technical means.