引言HgCdTe是一种具有独特性能的材料,制备P—n结又常用Hg扩散方法,它与常规的杂质扩散又有不同,加之材料的组分、结构及其固有的十分小的电子有效质量往往引起n型材料的简并等等问题,使成结工艺增加许多复杂因素。为了提高元件水平改进工艺,有必要对P—n结的特性作深入了解。测定P—n结的C—V(电容—电压)特 Introduction HgCdTe is a kind of unique material. The preparation of P-n junctions and the Hg diffusing method are common. Differing from the conventional diffusion of impurities, HgCdTe, in addition to its composition, structure and inherently small electron effective mass, Causing n-type material degeneration and so on, so that the knot process adds many complicated factors. In order to improve the level of components to improve the process, it is necessary to make a deep understanding of the characteristics of the P-n junction. The P-n junction was measured for C-V (Capacitance-Voltage) characteristics