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通过分析砷化镓(GaAs)器件的电离辐射剂量率辐照机理和效应,结合电路结构,描述了砷化镓10 bit数模转换器(DAC)的电离辐射剂量率辐射效应、抗辐射设计和辐照实验。在电路设计上,10 bit DAC由两个5 bit DAC组成,通过芯片内部合成10 bit DAC,有效降低了芯片面积和制造工艺难度;通过分析电路的电离辐射剂量率辐射效应,针对敏感电路进行局部电路的抗辐射设计,提高电路抗辐射能力;结合实验条件和器件引线分布,设计合理的辐照实验方案,开发辐照实验电路板,进行辐照实验,获得科学的实验结果,验证电路的抗辐射能力。实验结果表明该数模转换器能够抗3×1011rad(Si)/s剂量率的瞬时辐照。
By analyzing the ionizing radiation dose rate radiation mechanism and effect of gallium arsenide (GaAs) device and combining with the circuit structure, the ionizing radiation dose rate radiation effect of the gallium arsenide 10 bit digital-to-analog converter (DAC) Irradiation experiment. In the circuit design, the 10-bit DAC is composed of two 5-bit DACs. By synthesizing a 10-bit DAC in the chip, the chip area and manufacturing process are effectively reduced. By analyzing the ionizing radiation dose rate radiation effect of the circuit, The radiation resistance design of the circuit improves the ability of the circuit to resist radiation. Combining with the experimental conditions and the lead distribution of the device, a reasonable experimental scheme of irradiation is designed, the experimental circuit of the irradiation experiment is developed, the experiment of irradiation is conducted, the experimental results of the experiment are validated, Radiation ability. The experimental results show that the digital-to-analog converter can resist the instantaneous radiation dose rate of 3 × 1011rad (Si) / s.