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利用国产分子束外延设备研制出高质量GaAs-AlGaAs量子阱结构材料.经光荧光测量分析,其n=1的电子-重空穴自由激子复合发光的谱线很窄,半峰宽仅1.2MeV(阱宽141A,温度10.5K),表明量子阱阱宽和异质结界面平整度的起伏小于一个单原于层.样品从低温到室温都能保持激子发光特性.
High-quality GaAs-AlGaAs quantum well structure materials have been developed by domestic molecular beam epitaxy equipment. The spectral line of n = 1 electron-heavy hole free exciton recombination luminescence is very narrow and the FWHM is only 1.2 MeV (well width 141 A, temperature 10.5 K), indicating that the quantum well width and the roughness of the heterojunction interface are less than a single layer in the undulations and maintain the excitonic emission from low to room temperature.