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利用有限元法对立式氢化物气相外延系统工艺参数进行了优化,发现在新设计的立式氢化物气相外延反应器中,存在衬底与气体入口的最佳距离,在最佳距离位置上,沉积的均匀性最好.在设定的条件下模拟的结果表明这个距离为5cm.在此基础上,模拟得到了优化的生长参数.模拟的结果还表明重力方向与GaCl气体出口方向的夹角的大小,对GaN沉积的速率和均匀性影响很大.重力方向与GaCl气体出口方向相反时得到的计算结果与两者方向相同时得到的计算结果比较,尽管GaN沉积速率有所下降,但是沉积均匀性却得到了极大的改善.此外还讨论了浮力效应对GaN沉积的影响.
The process parameters of the vertical hydride vapor phase epitaxy system are optimized by the finite element method. It is found that in the newly designed vertical hydride vapor phase epitaxy reactor, the optimal distance between the substrate and the gas inlet exists. At the optimal distance , The best uniformity of deposition under the conditions set by the simulation results show that this distance is 5cm.On this basis, the simulation has been optimized growth parameters.The simulation results also show that the direction of gravity and GaCl gas outlet folder The size of the corner has a great influence on the rate and uniformity of the GaN deposition.Compared with the calculation results obtained when the direction of gravity is opposite to that of GaCl gas outlet and the direction of both are the same, although the deposition rate of GaN is decreased, The uniformity of deposition has been greatly improved.In addition, the effect of buoyancy on the deposition of GaN has also been discussed.