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利用Raman散射谱研究了GaN注Er以及Er+O共注样品的振动模,并讨论了共注入O对Er离子发光的影响.在Raman散射谱中,对于注Er的GaN样品出现了300cm-1和670cm-1两个新的Raman峰,而对于Er+O共注样品,除了上述两个峰外,在360cm-1处出现了另外一个新的峰,其中300cm-1峰可以用disorder-activated Raman scattering(DARS)来解释,670cm-1峰是由于与N空位相关的缺陷引起的,而360cm-1峰是由O注入引起的缺陷络合物产生的.由于360cm-1模的缺陷出现,从而导致Er+O共注入GaN薄膜红外光致发光(PL)强度的下降.
The Raman scattering spectra were used to study the vibrational modes of Er and Er + O co-injection samples. The effects of co-implantation of O on Er emission were discussed. In the Raman scattering spectra, And 670cm-1, respectively. For the Er + O co-injection sample, in addition to the above two peaks, another new peak appeared at 360cm-1, of which the 300cm-1 peak could be treated with disorder-activated Raman scattering (DARS), the 670 cm-1 peak is due to a defect associated with the N-vacancy and the 360 cm-1 peak is generated by a defect complex caused by O. Due to the occurrence of a defect in the 360 cm-1 mode, Resulting in a decrease in the intensity of PL (PL) of the Er + O co-implanted GaN film.