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采用电弧离子镀技术制备TiN薄膜,研究了不同氮分压以及基体偏压下薄膜的表面质量、微结构、相组成、硬度以及结合力,优化工艺参数并制备TiN/TiC多层膜,比较了多层膜以及TiC单层膜的硬度以及摩擦性能的差异。结果表明,经过对不同工艺参数下薄膜的形貌结构以及性能比较,确定采用0.6 Pa氮分压以及-100 V基体偏压作为TiN优化工艺参数,在该工艺基础上制备的TiN/TiC多层膜与单层TiC薄膜相比具有更高的硬度以及更低的摩擦系数。
TiN thin films were prepared by arc ion plating technique. The surface quality, microstructure, phase composition, hardness and cohesion of the films under different nitrogen partial pressure and substrate bias were studied. The TiN / TiC multilayer films were prepared and optimized. Multilayer and TiC monolayer films have different hardness and friction properties. The results show that after the comparison of the morphology and the properties of the films under different process parameters, it is determined that 0.6 Pa partial pressure of nitrogen and -100 V substrate bias are the optimal TiN process parameters. Based on this process, the TiN / TiC multilayer Films have higher hardness and lower coefficient of friction than monolithic TiC films.