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一、引言 MOS动态随机存贮器,是根据存贮单元中存贮管的栅电极是否存贮足够的电荷,存贮管的栅电位处于“1”电平或“0”电平,作为存“1”或存“0”的数据,由于pn结的空间电荷层以及表面和边缘的产生-复合电流和表面漏电流,使得存贮电荷随时间而消失,存贮信息丢失。因此每隔一定时间,一般为2毫秒周期则必须对存贮电荷进行补充即再生。再生周期的长短是动态MOS PAM的一个重要参数,也是制造动态RAM工艺水平的有效检测参数,资料[1][2]对信息存贮时间与漏电流的关系作了简单的分析和讨论,它们的讨论只是停留在存贮单元中存贮节点的电平下降与漏电流的关系,实际上RAM的再生周期的测
I. INTRODUCTION MOS dynamic random access memory is based on whether the gate electrode of the storage pipe in the storage unit stores enough charge and the gate potential of the storage pipe is in the level of “1” or “0” The data “1” or “0” is stored as the charge is lost over time due to the space charge layer of the pn junction as well as the generation of the surface and the edges - the recombination current and the surface leakage current. Therefore, at regular intervals, typically 2 milliseconds, the stored charge must be replenished or regenerated. The length of the regeneration cycle is an important parameter of dynamic MOS PAM and also an effective detection parameter for manufacturing dynamic RAM technology. Data [1] [2] made a simple analysis and discussion on the relationship between information storage time and leakage current. The discussion just stays in the memory cell storage node level drop and leakage current relationship, in fact, the cycle of the RAM test