论文部分内容阅读
在像增强器制备过程中,转移阴极—铟封技术使器件设计更加自由,并能提高器件的增益及时间、空间分辨率。相对于冷压铟封,热铟封技术更加简单实用,设备造价低,因此,在真空光电器件制备领域有着广泛的应用前景。但是,热铟封技术在保证器件气密性方面仍需进一步改善。本文采用真空蒸镀方式,在玻璃上制备了多层金属薄膜,以提高In-Sn合金与玻璃的润湿性能。采用座滴法比较了合金在玻璃及五种膜层结构表面的润湿及铺展性能。利用JSM-6700F型场发射电子扫描显微镜分析了润湿界面特性。结果表明:In-Sn合金与玻璃的润湿性能差,且在封接界面处容易产生孔洞;In-Sn合金在膜层结构玻璃/Cr/Cu和玻璃/Cr/Ni/Cu/Ag上表现出良好的铺展性和润湿性,在封接界面处,合金与薄膜表层结合致密,无缝隙或孔洞出现;器件铟封实验表明,采用膜层结构玻璃/Cr/Ni/Cu/Ag,热铟封制管成品率高,气密性良好。
In the image intensifier preparation process, the transfer cathode - indium seal technology to make the device design more freedom, and can improve the gain and time, spatial resolution of the device. Relative to the cold-pressed indium seal, hot indium seal technology is more simple and practical, low-cost equipment, therefore, in the field of vacuum optoelectronic devices has a wide range of applications. However, hot indium sealing technology still needs to be further improved in terms of ensuring the airtightness of the device. In this paper, vacuum evaporation method, the glass prepared on the multi-layer metal film, in order to improve the In-Sn alloy and glass wetting performance. The droplet method was used to compare the wetting and spreading properties of the alloy on the surface of glass and five film structures. The wetting interface characteristics were analyzed using a JSM-6700F field emission scanning electron microscope. The results show that the wettability of In-Sn alloy and glass is poor, and voids are easily formed at the sealing interface. In-Sn alloys are found on the glass / Cr / Cu and glass / Cr / Ni / Cu / Ag films Good spreadability and wettability, the alloy and the film surface at the sealing interface with dense, seamless or holes appear; device indium seal experiments show that the use of film structure glass / Cr / Ni / Cu / Ag, heat Indium seal tube yield, good air tightness.