已制成的0.1μm n沟硅栅MOSFET,其尺寸大约只有现代最新VLSI器件的1/10,非常适合未来的VLSI产品和超高速数字集成电路方面的应用.Glasgow,Scotland大学的电子和电学工程系已经研究与开发了一种工艺,采用极高分辩率的电子束曝光和反应离子刻蚀,刻出了0.1μm的硅栅■电极.在British电信和Edinburgh微细加工室的合作 The fabricated 0.1μm n-channel silicon gate MOSFET, which measures approximately one-tenth the size of modern VLSI devices, is well suited for future VLSI applications and very high speed digital integrated circuits. Glasgow, University of Scotland Electrical and Electronic Engineering Has researched and developed a process that uses a very high resolution electron beam exposure and reactive ion etching to etch a 0.1μm Si gate ■ Electrode.Cooperation at British Telecom and Edinburgh Micro Fabrication Room