【摘 要】
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Polycrystalline silicon (poly-Si) films were deposited using Ar diluted SiH4 gaseous mixture by electron cy-clotron resonance plasma-enhanced chemical vapor dep
【机 构】
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Institute of Metal Research,Armor Technique Institute of PLA,Dalian University of Technology
论文部分内容阅读
Polycrystalline silicon (poly-Si) films were deposited using Ar diluted SiH4 gaseous mixture by electron cy-clotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on deposition rate, crystallinity, grain size and the configuration of H existing in poly-Si film were investigated. The results show that, comparing with H2 dilution, Ar dilution could significantly decrease the concentration of H on the growing surface. When the substrate temperature increased, the deposition rate increased and the concentration of H decreased monotonously, but the crystallinity and the grain size of poly-Si films exhibited sophisticated trends. It is proposed that the crystallinity of the films is determined by a competing balance of the self-diffusion activity of Si atoms and the deposition rate. At substrate temperature of 200℃, the deposited film exhibits the maximum poly-Si volume fraction of 79%. Based on these results, higher substrate temperature is suggested to prepare the poly-Si films with advanced stability and compromised crystallinity at high deposition rate.
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