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采用CMOS标准工艺,同时采用三种典型MEMS后处理关键工艺,重点通过对牺牲层释放工艺进行研究,制作实现了一种新型CMOS兼容的电容式气压传感器.在该传感器结构中,作为牺牲层的是在CMOS工艺中形成的掺硼氧化硅.通过释放使电容上电极悬空从而感应气压变化.释放过程采用氢氟酸HF、氟化铵、甘油和水的混合溶液.由于释放孔大小和释放孔间距的设计十分关键,通过实验验证优化了4μm×4μm的释放孔更适用于此传感器结构,并对此结构进行了性能分析与实验测试.结果表明,该气压传感器结构合理,工艺成功,重点解决了MEMS后处理中的牺牲层释放工艺与CMOS标准工艺的兼容问题,为利用CMOS标准工艺进行MEMS传感器的研制做出了有益的尝试.
Using CMOS standard technology and adopting three typical MEMS post-processing key technologies, a new type of CMOS-compatible capacitive pressure sensor is fabricated by focusing on the sacrificial layer release process. In this sensor structure, as the sacrificial layer Is formed in the CMOS process doped boron oxide by releasing the capacitive upper electrode to sense the pressure change in the air pressure release process using hydrofluoric acid HF, ammonium fluoride, glycerin and water mixed solution due to the size of the release hole and release holes The design of the pitch is very important. The optimized 4μm × 4μm hole is more suitable for this sensor structure, and the performance analysis and experimental testing of this structure are carried out. The results show that the pressure sensor has a reasonable structure, the process is successful and the solution is focused The post-processing MEMS sacrificial layer release process and CMOS standard process compatibility issues for the use of CMOS standard process MEMS sensor made a useful attempt.