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The tantalum arsenide(TaAs)is a topological Weyl semimetal which is a class of materials of gapless with three-dimensional topological structure.In order to develop a comprehensive description of the topological properties of the Weyl semimetal,we use the density functional theory to study several defects of TaAs after H irradiation and report the electronic dispersion curves and the density of states of these defects.We find that various defects have different influences on the topological properties.Interstitial H atom can shift the Fermi level.Both Ta vacancy with a concentration of 1/64 and As vacancy with a concentration of 1/64 destruct a part of the Weyl points.The substitutional H atom on a Ta site could repair only a part of the Weyl points,while H atom on an As site could repair all the Weyl points.