国外用正电子湮灭技术对电子、质子、中子辐照过的硅单晶进行了研究。证明辐照过的硅单晶都产生缺陷,这些缺陷都能捕获正电子,引起正电子湮灭寿命谱的变化。 国产的一种硅单晶是在氢气氛中生长的,在生长过程中有氢气进入,在这种硅单晶中有硅氢键存在,当 Overseas positron annihilation technology electron, proton, neutron irradiated silicon single crystal was studied. It is proved that irradiated silicon single crystal has defects, all of which can capture positrons and cause the change of positron annihilation lifetime spectrum. A homemade silicon single crystal is grown under a hydrogen atmosphere with hydrogen gas entering during the growth. In this silicon single crystal, there exists a silicon-hydrogen bond. When