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用PHI-550型电子能谱仪的AES测量了经不同温度热处理后Al/PtSi/Si肖特基接触的组份深度分布,结合俄歇峰形的测量,分析了肖特基势垒高度与热处理温度的关系。
The depth distributions of Al / PtSi / Si Schottky contacts after heat treatment at different temperatures were measured by AES with PHI-550 electron spectrometer. Combined with Auger peak shape measurements, the relationship between Schottky barrier height and Relationship between heat treatment temperature.