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日本电气公司在InP衬底上研制成InP光电器件与GaAs电子器件单片集成的1.3μm光通信用发射与接收OEIC。用这种电路块进行了1.2Gbit/s NRZ光信号52.5km光纤无中继传输,接收灵敏度为-26dBm,并保证了4.5dB的光传输余量。发射机芯片含一
Nippon Electric Company developed InP substrate into InP optoelectronic devices and GaAs electronics monolithically integrated 1.3μm optical communications transmit and receive OEIC. With this circuit block, a 52.5km optical fiber with no transmission of 1.2Gbit / s NRZ optical signal is transmitted with a receiving sensitivity of -26dBm and a 4.5dB optical transmission margin is ensured. Transmitter chip with one