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采用CF4,CHF3,Ar三种工艺气体进行小尺寸CCD接触孔刻蚀实验,研究了不同气体配比、不同射频功率对刻蚀速率、选择比、条宽控制、侧壁形貌等参数的影响。通过优化工艺参数,比较刻蚀结果,最终获得了适合于刻蚀CCD小孔的工艺条件。
Three kinds of process gases CF4, CHF3, and Ar were used to etch small-sized CCD contact holes. The effects of different gas ratios and RF power on the etching rate, selectivity ratio, width control and sidewall morphology were studied . By optimizing the process parameters and comparing the results of the etching, the process conditions suitable for etching the CCD holes are finally obtained.