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由日本东北大学多元物质科学研究所教授宫下德治等人组成的研究小组, 利用Langmuir-Blodgett(LB)法研制出了数10 nm厚的导电高分子 (polythoiphene,聚噻吩)薄膜,使用它设计并试制了驱动原理采用电化学氧化还原反应的晶体管。试制出的晶体管在1.2 V电压下工作,导通截止比为2000。
A research team composed of Professor Masaki Miyataki and others from the Institute of Multivariate Materials Science at Tohoku University developed a 10 nm thick polythiophene thin film using the Langmuir-Blodgett (LB) method. Using it, Design and trial production of the principle of the drive using electrochemical redox reaction of the transistor. Prototype transistor work at 1.2 V, on-off ratio of 2000.