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GaAs阳极氧化技术已日益广泛地应用于半导体工艺.这种氧化技术的关键是选择适当的电解质.选择电解质时要考虑如下要求:在相同的氧化条件下,电解质必须具有相同的化学和电学特性;氧化膜在空气中存放必须不改变其化学稳定性;在阳极氧化中,氧化膜的生长速度远大于溶解速度.实验证实,对于GaAs阳极氧化,选用3%的酒石酸溶液和乙二醇(其体积比为1:2,pH值为3)能满足上述要求.GaAs阳极氧化的本质是将GaAs片作为阳极,铂片作为阴极,一起浸入电解质中,氧化时,Ga和As生成带正电荷的离子,在外电场的作用下朝着氧化膜-电解质交界面的方向运动,并且在阳极与氧生成无定形的Ga_2O_3和As_2O_3混合物.
GaAs anodization technology has been increasingly used in semiconductor technology.The key of this oxidation technology is to select the appropriate electrolyte.The choice of electrolyte should consider the following requirements: under the same oxidation conditions, the electrolyte must have the same chemical and electrical properties; The oxide film deposited in the air must not change its chemical stability; in anodic oxidation, the growth rate of the oxide film is far greater than the dissolution rate.It was confirmed experimentally that for the anodic oxidation of GaAs, 3% tartaric acid solution and ethylene glycol The ratio of 1: 2, pH value of 3) to meet the above requirements.GaAs anodic oxidation is the nature of the GaAs film as an anode, platinum as a cathode, immersed in the electrolyte together, the oxidation, Ga and As generate positively charged ions , Moved toward the oxide film - electrolyte interface under the action of external electric field, and formed amorphous mixtures of Ga 2 O 3 and As 2 O 3 at the anode with oxygen.