据日本《电子材料》1991年第4期报道,日本富士通研究所最先研制成HEMT64k位SRAM.这种SRAM与通常半导体一样,在室温下已达到世界最高速存取时间1.2ns,集成度比以前16k位SRAM提高4倍,实现了高集成化.HEMT是新型的超高速器件,用作记忆元件,比目前所用的硅半导体的性能大为提高.这种LSI具有以下特点:(1)与双极SRAM According to Japan’s “Electronic Materials” reported in 1991, No. 4, Japan’s Fujitsu Institute first developed HEMT64k-bit SRAM. SRAM and usually the same as the semiconductor at room temperature has reached the world’s highest-speed access time of 1.2ns, the integration ratio Previously 16k bit SRAM increased by 4 times, to achieve a high integration .HEMT is a new type of ultra-high-speed devices, used as a memory device, than the current performance of silicon semiconductor greatly improved.This LSI has the following characteristics: (1) Bipolar SRAM