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本文对梯度禁带外延碲镉汞层的“刚生长”的补偿层和在真空中变为p-型的退火层以及在汞蒸汽下变为n-型的那些层的电学传输测量结果进行了描述。讨论了外延层载流子浓度和梯度禁带的能带示意图和杂质浓度分布图及其应用的可能性。
The results of the electrical transmission measurements of the “just-growing” compensation layer of the gradient forbidden band-extension HgCdTe layer and the annealed layer that becomes p-type in the vacuum and those that become n-type under the mercury vapor description. The energy band diagram and impurity concentration distribution of epitaxial layer carrier concentration and gradient forbidden band are discussed, and the possibility of their application is discussed.