论文部分内容阅读
用分子束外延方法在 Ga As(10 0 )衬底上生长了高质量的 Zn Se/ Zn Sx Se1 - x(x=0 .12 )超晶格结构 ,通过 X射线衍射谱和光致发光谱 ,对其结构特性和光学特性进行了研究 .结果表明 :在 4 .4 K温度下 ,超晶格样品显示较强的蓝光发射 ,主发光峰对应于阱层 Zn Se的基态电子到重空穴基态的自由激子跃迁 ,而且其峰位相对于 Zn Se薄膜的自由激子峰有明显蓝移 .从理论上分析计算了由应变和量子限制效应引起的自由激子峰位移动 ,理论和实验结果相吻合
High quality ZnSe / ZnSxSe1 - x (x = 0.12) superlattice structures were grown on GaAs (100) substrates by molecular beam epitaxy. X - ray diffraction and photoluminescence (PL) The results show that the superlattice samples show strong blue emission at4.4 K, and the main emission peak corresponds to the ground state electron of the ZnSe well layer to the ground state of the heavy hole , And its peak position is obviously blue-shifted relative to the free exciton peak of Zn Se thin film.Finally, the free-exciton peak shift caused by strain and quantum confinement effect is analyzed and calculated theoretically and experimentally Anastomosis