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用磁控溅射方法制备纳米多晶钨膜,采用X射线衍射(XRD),扫描电子显微镜(SEM),弹性反冲探测(ERD)和慢正电子束分析(SPBA)等手段研究了在高能He+和H+依次对其辐照后He相关缺陷对H滞留的影响。结果表明,注He+钨膜在退火后从β型钨向α型钨转变;钨膜中的He含量随着退火温度的提高而减少,在873 K退火加剧钨膜中He原子的释放,且造成钨膜空位型缺陷的增加和结构无序度的提高;钨膜中的H滞留总量随着He滞留总量的减少略有下降。
Nano-polycrystalline tungsten films were prepared by magnetron sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM), elastic recoil detection (ERD) and slow positron beam analysis (SPBA) Effect of He + and H + Irradiation on Heptatic Defects of He-related Defects. The results show that the thickness of He + tungsten film changes from β-type tungsten to α-type tungsten after annealing. The content of He in tungsten film decreases with the increase of annealing temperature. Annealing at 873 K intensifies the release of He atoms from the tungsten film The increase of tungsten vacancies and the increase of structure disorder degree; the total amount of H in the tungsten film decreases slightly with the decrease of the total amount of He in the tungsten film.