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本文介绍新近功率MOS场效应晶体管的主要结构和电学性能。为了提高MOS晶体管的电流和电压容量,首先得论述一些基本概念;然后介绍迄今为止最有希望的功率MOS结构,即V·MOS和VD·MOS晶体管中所使用的方法。 接着,我们叙述这些器件的电学性能,即阈值电压、电压—电流特性、欧姆(电阻)特性、饱和及准饱和范围,一次和二次击穿、安全工作区。还讨论了某些动态特性。最后,分析了功率MOS场效应晶体管的基本限制之一,即导通电阻与电压控制能力间的权衡;并提供了某些与其它功率器件的比较数据。
This article describes the main structure and electrical performance of recent power MOS field effect transistors. To improve the current and voltage capacities of MOS transistors, some basic concepts have to be discussed first; then the most promising power MOS structures to date, the methods used in V.MOS and VD.MOS transistors, are described. Next, we describe the electrical performance of these devices, namely, threshold voltage, voltage-current characteristics, ohmic (resistance) characteristics, saturation and quasi-saturation range, primary and secondary breakdown, safe operating area. Some of the dynamics are also discussed. Finally, one of the fundamental limitations of power MOS field effect transistors, the trade-off between on-resistance and voltage control capability, is analyzed, along with some comparative data for other power devices.