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我校物理系非晶硅材料研究工作在1984年元月鉴定会后,目前又取得了三项突破性进展。首先,使非晶性薄膜的缺陷态密度降低到了10~16CM~(-3)ev~(-1)以下,与国外水平相当。美国国际非晶顾问委员会主席,芝加哥大学物理系主任弗里茨教授,对此工作给予了高度评价。美国俄勒冈大学科恩教授来信说:“那个样品表现出很高的质量,是一个很纯正的薄膜,绝缘性能非常好。”“说真的,我非常惊奇您的非晶硅薄膜做得这么好。”南京大学测试后来信说:刘克源老师在非晶硅方面取得了好结果。
After studying the non-crystalline silicon materials of Department of Physics of our school in January 1984, it has made three breakthroughs. First of all, the defect density of the amorphous film is reduced below 10 ~ 16CM ~ (-3) ev ~ (-1), which is equivalent to that of foreign countries. Professor Fritz, chairman of the International Amorphous Advisory Board of the United States and director of the Department of Physics at the University of Chicago, spoke highly of this work. Professor Cohen from the University of Oregon wrote: “The sample shows a very high quality, is a very pure film, and the insulation is very good.” “Really, I am very surprised that your amorphous silicon film has done so well. ”Nanjing University test letter later said: Liu Keyuan teacher made good results in amorphous silicon.