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本文测量了热壁外延CdTe/(111)CdTe薄膜的荧光光谱,并与CdTe体材料的荧光光谱进行了比较,证实了热壁外延CdTe/(111)CdTe薄膜具有很高的质量。实验所用热壁外延CdTe薄膜的生长条件如下:衬底CdTe用Bridgman方法生长,晶向为(111),经机械抛光、化学机械抛光以及(酒精+Br_2)溶液腐蚀。外延之前,衬底在超高真空中在350℃温度下热处理。外延时,使用单个CdTe源,温度为470～550℃,衬底温度
The fluorescence spectra of CdTe / (111) CdTe thin films with hot wall epitaxial growth were measured and compared with the fluorescence spectra of CdTe / CdTe thin films. The results show that the CdTe / (111) CdTe thin films have high quality. The growth conditions of the hot-wall epitaxial CdTe thin film used in the experiment are as follows: The substrate CdTe is grown by the Bridgman method and has a crystal orientation of (111), mechanically polished, chemically polished and etched with (alcohol + Br 2) solution. Prior to epitaxy, the substrate was heat-treated at 350 ° C in an ultra-high vacuum. At epitaxy, a single CdTe source was used at a substrate temperature of 470-550 ° C