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一、 引言 随着半导体器件向微小型化发展,电路的速度与栅极和互连材料密切相关。目前应用较广的多晶硅栅技术具有自对准形成源漏区、低阈值电压、高温热稳定性好等优点。但多晶硅的电阻率较高,严重影响了电路速度的提高。在多晶硅上生长一层具有高电导率的TiSi_2薄膜取代多晶硅作为栅电极,可以有效地克服多晶硅电阻率高的缺点,提高电路速度。 本实验采用NH_3等离子体增强热退火,使Ti/poly Si固相反应形成TiSi_2,同时表面形成一层很薄的TiN。TiN被证明是一层良好的扩散阻挡层。通过对TiN/TiSi_2复合薄膜的薄层电阻测试和MOS高频C—V测试,证明这种方法是可行的。
I. INTRODUCTION With the miniaturization of semiconductor devices, the speed of the circuit is closely related to the gate and interconnect materials. At present, the widely used polysilicon gate technology has the advantages of self-aligning to form a source drain region, a low threshold voltage, and high thermal stability. However, the higher the resistivity of polysilicon, seriously affecting the speed of the circuit. The growth of polycrystalline silicon with a layer of high conductivity TiSi_2 thin film instead of polysilicon as a gate electrode, polysilicon can effectively overcome the shortcomings of high resistivity and improve circuit speed. In this experiment, NH_3 plasma enhanced thermal annealing, Ti / poly Si solid phase reaction to form TiSi_2, while the surface to form a thin layer of TiN. TiN proved to be a good diffusion barrier. Through the sheet resistance test of TiN / TiSi_2 composite film and MOS high frequency C-V test, this method is proved to be feasible.