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研究了几种因素对4H-SiC隐埋沟道MOSFET沟道迁移率的影响.提出了一个简单的模型用来定量分析串联电阻对迁移率的影响.串联电阻不仅会使迁移率降低,还会使峰值场效应迁移率所对应的栅压减小.峰值场效应迁移率和串联电阻的关系可用一个二次多项式来准确描述.详细分析了均匀分布和不均匀分布的界面态对场效应迁移率的影响.对于指数分布的界面态,低栅压下界面态的影响基本上可以忽略不计,随着栅压的增加,界面态的影响越来越显著.
The influence of several factors on the channel mobility of 4H-SiC buried channel MOSFETs was investigated, and a simple model was proposed to quantitatively analyze the effect of series resistance on the mobility. The series resistance not only reduces the mobility, The gate voltage corresponding to the peak field-effect mobility is reduced.The relation between the peak field-effect mobility and the series resistance can be accurately described by a quadratic polynomial.Further analysis of the effect of interface states with uniform distribution and non-uniform distribution on the field-effect mobility The influence of interface states is more and more obvious with the increase of gate voltage for exponential distribution of interface states and the influence of interface states under low gate voltage is negligible.