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采用恒电流电化学技术直接在金属钼片上制备了具有白钨矿结构的钼酸锶(SrMoO4)多晶薄膜,着重在实验上研究了薄膜的晶体生长特性。研究表明,采用电化学技术制备SrMoO4晶态薄膜时,薄膜的生长具有如下特点:(1)晶核生成需要一定的时间,但晶核一旦生成,其形貌就比较完整;(2)晶核和晶粒优先选择在基体缺陷(折叠、划痕、缺陷、凹凸不平等)处生长和堆砌;(3)基体上晶粒的数量随着制备时间的增加而增加,晶粒的尺寸随着时间的增加而长大,晶粒逐渐从基体表面上的稀疏分布直到布满整个基体;(4)晶粒的{111}面总是显露的;(5)在薄膜生长的整个过程中,晶粒基本上以其c轴垂直于薄膜基体表面进行的。上述研究结果对进一步认识薄膜的晶体生长和利用电化学法制备晶态薄膜都具有重要意义。
The strontium molybdate (SrMoO4) polycrystalline thin film with scheelite structure was prepared directly on the metal molybdenum plate by constant current electrochemical technique. The crystal growth characteristics of the thin film were studied experimentally. The results show that when the SrMoO4 crystalline thin film is prepared by electrochemical technique, the growth of the thin film has the following characteristics: (1) it takes a certain amount of time for the nucleation to form, but the morphology of the nucleus is relatively intact; (2) And grain preferential growth and pile-up in the matrix defects (folding, scratches, defects, unevenness); (3) the number of grains on the matrix increases with the preparation time, the size of the grains with time (4) the {111} plane of the grains is always exposed; (5) in the whole process of film growth, the grains Basically with its c-axis perpendicular to the surface of the film substrate. The above results are of great significance for further understanding the crystal growth of thin films and the preparation of crystalline thin films by electrochemical methods.