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本文测量了各种ＩｎＰ样品中的正电子寿命谱，用正电子湮没率连续分布测量（ＣＯＮ－ＴＩＮ分析）结合ＰＡＴＦＩＴ分析正电子寿命谱，肯定了在ｎ型和半绝缘型ＩｎＰ中有Ｉｎ空位ＶＩｎ和Ｐ空位ＶＰ，而在ｐ型ＩｎＰ中只观察到Ｉｎ空位ＶＩｎ．正电子寿命的温度关系表明所观察到的ｎ型和半绝缘型中的ＶＩｎ和ＶＰ以及ｐ型ＩｎＰ中的ＶＩｎ均为电中性．改进了常规的多普勒展宽谱仪．利用这一谱仪测量了ｎ型及半绝缘型ＩｎＰ的多普勒展宽谱，结合正电子寿命测量结果，观察到在掺Ｆｅ的半绝缘型ＩｎＰ中存在ＶＰ－Ｆｅ络合物
In this paper, positron lifetime spectra of various InP samples were measured. Positron annihilation continuous distribution measurement (CON-TIN analysis) combined with PATFIT analysis of positron lifetime spectra confirmed the existence of In vacancies in n-type and semi-insulating InP VIn and P vacancy VP, whereas only In vacancy VIn is observed in p-type InP. The temperature dependence of positron lifetime indicates that both observed VIn and VP in n-type and semi-insulating types and VIn in p-type InP are electrically neutral. Improved conventional Doppler broadening spectrometer. Doppler broadening spectra of n-type and semi-insulating InP were measured by this spectrometer. Combined with the results of positron lifetime measurements, the presence of VP-Fe complex in Fe-doped semi-insulating InP