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用目前的光刻技术使同一硅片上各图形的套准偏差小于1微米是困难的,本文提出的侧向选择腐蚀对准工艺可以达到这个要求。这种工艺的要点是利用不同介质薄膜的选择腐蚀特性来进行图形的对准,然后利用氮化硅的选择氧化使这种对准了的图形刻印到硅片上去。由于它对光刻针孔能同时自动地“对准”,故在很大程度上能消除针孔的有害影响。介绍了该工艺在器件制造中应用的实例。
Current lithographic techniques make it difficult to register misalignments of the individual patterns on the same wafer by less than one micrometer. The lateral selective etching alignment process proposed in this paper meets this requirement. The key point of this process is the use of selective etching characteristics of different dielectric films for pattern alignment and then the alignment of the etched pattern to the silicon wafer using the selective oxidation of silicon nitride. Because of its ability to simultaneously “pinch” a photolithographic pinhole at the same time, the detrimental effect of the pinhole can be largely eliminated. The application of this technology in device manufacturing is introduced.