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用分子束外延 (MBE)方法在GaAs表面量子阱上外延生长不同厚度的Al层 ,以超高真空下的原位光调制光谱(PR)作为测量手段 ,研究Al扩散形成的表面势垒层对于GaAs表面量子阱中带间跃迁峰位和峰形的影响 .根据跃迁峰的变化 ,采用有效质量近似理论计算出了Al和GaAs的互扩散长度为 0 5nm ,这是半导体工艺中的一个重要常数
The Al layer with different thickness was epitaxially grown on the GaAs surface quantum well by molecular beam epitaxy (MBE) method. The in-situ photo-modulation spectrum (PR) under ultrahigh vacuum GaAs surface quantum well trap peak position and peak shape.According to the change of transition peak, using effective mass approximation theory calculated the interdiffusion length of Al and GaAs is 0 5nm, which is an important constant in the semiconductor technology