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研究了一种新的红外瞬态退火技术,其工艺与常规的MOS工艺高度兼容.本文报道了这种红外瞬态退火的全注入 MOS工艺.用这种工艺制备的1μm沟长的 MOSFET 的电性能良好。同时也制备了 3μm沟长的 23级环振器与沟长为2 μm的 43级环振器,这些环振器每级门的延迟时间分别是1ns和0.6ns.
A new infrared transient anneal technology is studied and its process is highly compatible with the conventional MOS process.This paper reports the full-injection MOS process of this infrared transient anneal.In this paper, Good performance. A 23-μm ring resonator with 3 μm channel length and a 43-ring resonator with 2 μm channel length were also fabricated. The delay time of each stage of these ring resonators was 1 ns and 0.6 ns, respectively.