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The presence of metallic contaminations such as Au, Cu, Ti, Ni, etc. during silicon device processing often causes junction breakdown and soft reverse voltage breakdown. It is an important technique to getter the metallic atoms from certain regions by localizing them in other parts in the wafer.Based on the conclusions summarized by Ourmazd that gettering may be understood in terms of two basic processes: the interaction of self-intersti-tials with impurities and the influence of strain in enhancing impurity drift, a series of diffusion equations has bsen set up to describe the diffusion of substitutional metallic atoms in Si with getters and has been used to calculate the Au diffusion in Si with P-doped and Ar+-implanted backside getters. The theoretical results ars in reasonable agreement with the reported experimental data.
The presence of metallic contaminations such as Au, Cu, Ti, Ni, etc. during silicon device processing often causes junction breakdown and soft reverse voltage breakdown. It is an important technique to getter the metallic atoms from certain regions by localizing them in other parts in the wafer. Based on the results summarized by Ourmazd that gettering may be understood in terms of two basic processes: the interaction of self-intersti-tials with impurities and the influence of strain in enhancing impurity drift, a series of diffusion equations has bsen set up to describe the diffusion of substituted metallic metallic atoms in Si with getters and has been used to calculate the Au diffusion in Si with P-doped and Ar + -implanted backside getters. The theoretical results ars in reasonable agreement with the reported experimental data.