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我们研制了用于薄膜工艺的宽束离子源.该源能提供20～3000cV,束流强度最大达100mA 的宽离子束,可根据不同工艺要求,产生均匀束、会聚束及球状发散束等不同束形,并按不同的引出束能量,采用三栅、双栅或单栅引出系统.其最大气耗量为1.2Pa·m~3/s,放电室工作气压1.33×10~(-2)Pa(10~(-4)Torr 量级),可用 N_2、O_2、Ar 及 CH_4等工质工作.它已在离子束溅射镀膜、离子束直接淀积成膜及离子束辅助镀膜工艺得到了应用.证明其性能良好,稳定可靠.本文论述源的工作原理、结构、工作特性及多功能引出系统,并讨论了放电稳定性及薄膜工艺对离子源的要求.
We have developed a wide-beam ion source for thin-film processes that provides a wide ion beam of 20 to 3000cV with a beam current of up to 100mA and produces uniform, convergent and spherical divergent beams depending on the process requirements Beam shape, and according to the different extraction beam energy, using tri-grid, double-grid or single-grid extraction system, the maximum gas consumption is 1.2 Pa · m ~ 3 / s and the working pressure of the discharge chamber is 1.33 × 10 -2 Pa (10 ~ (-4) Torr), which can be used as working medium such as N_2, O_2, Ar and CH_4 etc. It has been obtained by ion beam sputter coating, direct ion deposition and ion beam assisted deposition Which is proved to be good and stable.This paper discusses the working principle, structure, working characteristics and multi-function extraction system of the source, and discusses the discharge stability and the requirements of the ion source for the thin film process.