本文报道了GaAs/GaAlAs材料低阈值掩埋异质结(BH)半导体激光器的研究成果。利用液相外延技术对一次外延生长双异质结构激光器,二次外延生长掩埋异质结构激光器进行了十分系统的工艺实验。通过结构设计的优化和工艺技术的改进与完善,达到了预期的极低阈值的结果。一次外延的宽接触阈值电流密度一般均低于1000A/cm~2,最低达675A/cm~2,经过二次外延的掩埋制作,器件的阈值电流低于10mA,最低可达4mA。这是国内报道的同类激光器最好水平。 This paper reports the research results of GaAs / GaAlAs low threshold buried heterojunction (BH) semiconductor lasers. The liquid phase epitaxy technique is used to conduct a systematic experiment on a single epitaxial growth double heterostructure laser and a second epitaxial growth buried heterostructure laser. Through the structural design optimization and process improvement and improvement of technology, reached the expected results of the very low threshold. The threshold current of a wide contact threshold is less than 1000A / cm ~ 2 and the lowest is 675A / cm ~ 2. After the second epitaxial burying, the threshold current of the device is less than 10mA and the minimum current is 4mA. This is the best laser of the same level reported in China.