Monte Carlo simulations are adopted to study the electron transport process in the non-uniform electric field. Some important parameters of electrons in diamond films dynamic process at low temperature via EACVD such as angle distribution, energy distribution, average energy of electrons are given. The results indicate that the electron scattering near the substrate is mainly of a large-angle scattering, exhibiting a double-peaking distribution. All of the conclusions provide some theoretical data referential to the vapor dynamic model of diamond film growth at low temperature via EACVD. Monte Carlo simulations are studied to study the electron transport process in the non-uniform electric field. Some important parameters of electrons in diamond films dynamic process at low temperature via EACVD such as angle distribution, energy distribution, average energy of electrons are. results indicate that the electron scattering near the substrate is mainly of a large-angle scattering, exhibiting a double-peaking distribution. All of the conclusions provide some double-peaking distribution of diamond film growth at low temperature via EACVD.