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最近，利用低温梯度分布（＜１０Ｋ／ｃｍ）进行半导体化合物的晶体生长受到重视。在无籽晶生长时发现在尖端区严重过冷。这种过冷效应取决于熔态的过热程度。对约大于１０Ｋ的过热熔体，过冷度的同步增加反映出熔化ＣｄＴｅ缔合结构的减少。若所用的过热大于９～１０Ｋ，结晶时可产生一个大的延伸多晶区。在最初凝固的多晶区后面有一单晶段，或只有一两个晶界的区域。用低过热度（＜９～１０Ｋ）时，经常可见到初始单晶生长区。但是在生长程序的较后阶段会产生较大数目的晶界。
Recently, the crystal growth of semiconductor compounds by using a low-temperature gradient distribution (<10 K / cm) has attracted attention. Severe subcooling in the tip region was found during seedless growth. This undercooling effect depends on the degree of overheating in the melt. For overheated melts above about 10K, the synergistic increase in undercooling reflects the reduction of the molten CdTe association structure. If the overheating used is greater than 9 ~ 10K, crystallization can produce a large extended polycrystalline region. Behind the initially solidified polycrystalline zone there is a single crystal section, or only one or two grain boundaries. With low degree of superheat (<9 ~ 10K), the initial single crystal growth area can often be seen. However, a greater number of grain boundaries will result in later stages of the growth process.