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本文叙述一种在Hg_(1-x)Cd_xTe上形成氧化薄膜的新的等离子氧化工艺。测量了用自身氧化膜形成的金属——绝缘层——半导体器件的电学特性。这种氧化膜有相当低的固定表面电荷,其密度为(1—3)×10~(11)电子/厘米~2,优于用化学阳极氧化所生长的氧化膜。由300埃自身氧化膜和200埃硫化锌组合而成的绝缘层,对n型和p型衬底所测量的平带电压分别是-0.5伏和-2.5伏。对于铟栅极结构所测量的功函数差是-1.7伏。氧化物的相对介电常数是13。电容——电压和电流——电压特性表明这种界面很适于光导、光伏二极管和电荷耦合器件等的制备工艺。
This paper describes a new plasma oxidation process for forming an oxide film on Hg_ (1-x) Cd_xTe. The electrical characteristics of the metal-insulator-semiconductor device formed with its own oxide film were measured. This oxide film has a relatively low fixed surface charge and has a density of (1-3) x 10-11 electrons / cm2, which is superior to an oxide film grown by chemical anodization. The insulating layer, which is a combination of 300 angstroms of self-oxidized film and 200 angstrom of zinc sulfide, measures -0.5 volts and -2.5 volts, respectively, for the n-type and p-type substrates. The measured work function difference for the indium gate structure is -1.7 volts. The relative dielectric constant of oxide is 13. Capacitor-voltage and current-voltage characteristics indicate that this interface is well suited for the fabrication of light guides, photodiodes and charge-coupled devices.