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CMOS集成电路具有功耗低,噪声容限高,单电源工作,工作电压范围宽的优点。因些自六十年代问世以来,发展迅速,目前已广泛地应用于各类基本电路,手表,存贮器和微处理机。但是由于CMOSS集成电路中必须采有重参杂的扩散条将各元件包围起来。这样就增大了电子的无沅区面积。集成是目前CMOS集成电路的一个主要缺点。估计NMOS,PMOS,TTL (LSI),CMOS和TTL(MSI)的单门面积此的为1:1:2:4:10:10。从近几年的发展来看,大规模集成电路的单片（应数/）大约每年提高一倍,但是CMOSR单片容量总是只有同期NMOS的四分之一。例如1976年NMOS动态RAM生产水平已达16位。
CMOS integrated circuits have the advantages of low power consumption, high noise margin, single-supply operation and wide operating voltage range. Since its introduction in the 1960s, it has developed rapidly and is now widely used in various types of basic circuits, watches, memories and microprocessors. However, due to CMOSS integrated circuits must adopt a complex glow of the diffusion of the components surrounded. This will increase the electronic area without Yuan. Integration is currently a major drawback of CMOS integrated circuits. It is estimated that the single gate area of NMOS, PMOS, TTL (LSI), CMOS and TTL (MSI) is 1: 1: 2: 4: 10: 10. In recent years, the development of large-scale integrated circuits, monolithic (d /) about doubled every year, but CMOSR monolithic capacity is only one quarter of the same period of NMOS. For example, in 1976, NMOS dynamic RAM production reached 16 bits.