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功率转换器的功率密度越来越高,发热问题越来越严重,这种功率转换器的设计对现代大功率半导体技术提出了新的挑战;因而,热问题的优化设计和核实变得比大功率器件的电模型更加重要,本文提出一种新的PSPICE模型,可以利用它计算MOSFET芯片在瞬变过程中的温度。其中的热阻可以从制造商提供的产品使用说明书得到。本文介绍的模型提供发热和电气参数之间的动态关系。它建立了与许可的热环境的关系,例如,栅极驱动电路、负载、以及散热器的分析与优化设计。利用这个模型可以改善散热器的设计。由于决定功率损耗的参数是分布在一定范围内,受生产制造的影响很大,因而散热器的设计往往由于无法预先知道功率损耗而无法进行。
Power converter power density is getting higher and higher, more and more serious heating problems, the power converter design for modern high-power semiconductor technology presents new challenges; therefore, the optimal design and verification of thermal issues become larger than large The electrical model of the power device is more important. In this paper, a new PSPICE model is proposed, which can be used to calculate the temperature of the MOSFET chip in the transient process. The thermal resistance can be obtained from the manufacturer's product manual. The model presented in this article provides a dynamic relationship between heating and electrical parameters. It establishes the relationship with the permitted thermal environment, for example, gate drive circuit, load, and heat sink analysis and optimization design. Use this model can improve the design of the radiator. Since the parameters that determine the power loss are distributed in a certain range and are greatly affected by the manufacturing, the design of the heat sink often can not be performed because it can not know the power loss in advance.